![]() A thin layer of wide-bandgap halide perovskite is formed on top of the narrow-bandgap light-absorbing layer by an in situ reaction of n-hexyl trimethyl ammonium bromide on the perovskite surface. Here we propose a device architecture for highly efficient perovskite solar cells that use P3HT as a hole-transport material without any dopants. Poly(3-hexylthiophene) (P3HT) is an alternative hole-transport material with excellent optoelectronic properties 11, 12, 13, low cost 8, 14 and ease of fabrication 15, 16, 17, 18, but so far the efficiencies of perovskite solar cells using P3HT have reached only around 16 per cent 19. ![]() However, these materials have several drawbacks in terms of commercialization, including high cost 8, the need for hygroscopic dopants that trigger degradation of the perovskite layer 9 and limitations in their deposition processes 10. So far, only two organic hole-transport materials have led to state-of-the-art performance in these solar cells 1: poly(triarylamine) (PTAA) 2, 3, 4, 5 and 2,2ʹ,7,7ʹ-tetrakis( N, N-di- p-methoxyphenylamine)-9,9ʹ-spirobifluorene (spiro-OMeTAD) 6, 7. Perovskite solar cells typically comprise electron- and hole-transport materials deposited on each side of a perovskite active layer. ![]()
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